Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility

标题
Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility
作者
关键词
-
出版物
Journal of Physical Chemistry C
Volume 120, Issue 39, Pages 22663-22669
出版商
American Chemical Society (ACS)
发表日期
2016-09-08
DOI
10.1021/acs.jpcc.6b06673

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