n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

Thickness-dependent transition of the valence band shape from parabolic to Mexican-hat-like in the MBE grown InSe ultrathin films

(2018) I. A. Kibirev et al.   APPLIED PHYSICS LETTERS

Electrical contacts in monolayer blue phosphorene devices

(2018) Jingzhen Li et al.   Nano Research

Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect

(2018) Meng Wu et al.   Nanoscale

Monolayer tellurene–metal contacts

(2018) Jiahuan Yan et al.   Journal of Materials Chemistry C

Three-layer phosphorene-metal interfaces

(2017) Xiuying Zhang et al.   Nano Research

A computational study of monolayer hexagonal WTe2 to metal interfaces

(2017) Chol So et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Electronic properties of layered phosphorus heterostructures

(2017) Ruge Quhe et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study

(2017) Zhili Zhu et al.   PHYSICAL REVIEW LETTERS

The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications

(2017) Danil Boukhvalov et al.   Nanomaterials

Indium selenide: an insight into electronic band structure and surface excitations

(2017) A. Politano et al.   Scientific Reports

Ab initio study of carrier mobility of few-layer InSe

(2016) Chong Sun et al.   Applied Physics Express

Monolayer Phosphorene–Metal Contacts

(2016) Yuanyuan Pan et al.   CHEMISTRY OF MATERIALS

2D phosphorene as a water splitting photocatalyst: fundamentals to applications

(2016) Mohammad Ziaur Rahman et al.   Energy & Environmental Science

Interfacial Properties of Monolayer MoSe2–Metal Contacts

(2016) Yuanyuan Pan et al.   Journal of Physical Chemistry C

The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

(2016) A. Politano et al.   Nanoscale

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

Performance Upper Limit of sub-10 nm Monolayer MoS2Transistors

(2016) Zeyuan Ni et al.   Advanced Electronic Materials

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors

(2015) Wei Feng et al.   ACS Applied Materials & Interfaces

3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

(2015) Yuzheng Guo et al.   ACS Applied Materials & Interfaces

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

(2015) Xidong Duan et al.   CHEMICAL SOCIETY REVIEWS

Semiconducting black phosphorus: synthesis, transport properties and electronic applications

(2015) Han Liu et al.   CHEMICAL SOCIETY REVIEWS

An Atomically Layered InSe Avalanche Photodetector

(2015) Sidong Lei et al.   NANO LETTERS

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

(2015) Sukrit Sucharitakul et al.   NANO LETTERS

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Performance improvement of multilayer InSe transistors with optimized metal contacts

(2015) Wei Feng et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors

(2015) Yufeng Liang et al.   PHYSICAL REVIEW LETTERS

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe

(2014) Sidong Lei et al.   ACS Nano

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

(2014) Bhim Chamlagain et al.   ACS Nano

Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface

(2014) Wei Feng et al.   ADVANCED MATERIALS

High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response

(2014) Srinivasa Reddy Tamalampudi et al.   NANO LETTERS

Tunable Transport Gap in Phosphorene

(2014) Saptarshi Das et al.   NANO LETTERS

MoS2 Transistors Operating at Gigahertz Frequencies

(2014) Daria Krasnozhon et al.   NANO LETTERS

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

(2013) Garry W. Mudd et al.   ADVANCED MATERIALS

Strong band hybridization between silicene and Ag(111) substrate

(2013) Yakun Yuan et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Tunable and sizable band gap in silicene by surface adsorption

(2012) Ruge Quhe et al.   Scientific Reports

Homogeneous Nucleation of Graphitic Nanostructures from Carbon Chains on Ni(111)

(2011) Daojian Cheng et al.   Journal of Physical Chemistry C

Tunable Bandgap in Silicene and Germanene

(2011) Zeyuan Ni et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Effect of cluster formation on graphene mobility

(2010) K. M. McCreary et al.   PHYSICAL REVIEW B