Planar Direction‐Dependent Interfacial Properties in Monolayer In 2 Se 3 –Metal Contacts

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

(2019) Jie Yang et al.   Advanced Electronic Materials

Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3

(2018) Fei Xue et al.   ACS Nano

Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3

(2018) Chaojie Cui et al.   NANO LETTERS

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

(2018) Hong Li et al.   Nano Research

Room-Temperature Ferroelectricity and Switchable Diode Effect in Two-Dimensional α-In2Se3 Thin Layers

(2018) Siyuan Wan et al.   Nanoscale

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

(2018) Shiqi Liu et al.   Journal of Materials Chemistry C

Two-dimensional III 2 -VI 3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum

(2018) Pei Zhao et al.   Nano Energy

High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets

(2018) Wei Feng et al.   NANOTECHNOLOGY

n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors

(2018) Bowen Shi et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Three-layer phosphorene-metal interfaces

(2017) Xiuying Zhang et al.   Nano Research

Black phosphorus transistors with van der Waals-type electrical contacts

(2017) Ruge Quhe et al.   Nanoscale

A computational study of monolayer hexagonal WTe2 to metal interfaces

(2017) Chol So et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

(2017) Wenjun Ding et al.   Nature Communications

Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In2Se3

(2016) Wei Feng et al.   CHEMISTRY OF MATERIALS

Monolayer Phosphorene–Metal Contacts

(2016) Yuanyuan Pan et al.   CHEMISTRY OF MATERIALS

Interfacial Properties of Monolayer MoSe2–Metal Contacts

(2016) Yuanyuan Pan et al.   Journal of Physical Chemistry C

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

Does the Dirac cone of germanene exist on metal substrates?

(2016) Yangyang Wang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Performance Upper Limit of sub-10 nm Monolayer MoS2Transistors

(2016) Zeyuan Ni et al.   Advanced Electronic Materials

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

Semiconducting black phosphorus: synthesis, transport properties and electronic applications

(2015) Han Liu et al.   CHEMICAL SOCIETY REVIEWS

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

(2015) Sukrit Sucharitakul et al.   NANO LETTERS

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Silicene transistors

(2015) Guy Le Lay   Nature Nanotechnology

Performance improvement of multilayer InSe transistors with optimized metal contacts

(2015) Wei Feng et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Ti3C2 MXene as a High Capacity Electrode Material for Metal (Li, Na, K, Ca) Ion Batteries

(2014) Dequan Er et al.   ACS Applied Materials & Interfaces

Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe

(2014) Sidong Lei et al.   ACS Nano

Tunable Transport Gap in Phosphorene

(2014) Saptarshi Das et al.   NANO LETTERS

MoS2 Transistors Operating at Gigahertz Frequencies

(2014) Daria Krasnozhon et al.   NANO LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

(2008) Zhijun Qiu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES