The physics and chemistry of the Schottky barrier height

Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction

(2013)   APPLIED PHYSICS LETTERS

Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces

(2013) Yang Li et al.   APPLIED SURFACE SCIENCE

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

(2013) Xiao Guo et al.   MICROELECTRONIC ENGINEERING

Enhancement of the Schottky barrier height of Au/ZnO nanocrystal by zinc vacancies using a hydrothermal seed layer

(2013) J D Hwang et al.   NANOTECHNOLOGY

Modification of Schottky barrier height on Si (111) by Ga-termination

(2013) Wei Long et al.   SURFACE SCIENCE

Inhomogeneous ohmic contacts: Barrier height and contact area determination

(2012) Yang Li et al.   APPLIED PHYSICS LETTERS

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

(2012) Zhiqiang Li et al.   IEEE ELECTRON DEVICE LETTERS

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

(2012) Yi Tong et al.   IEEE ELECTRON DEVICE LETTERS

The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium

(2012) Arunanshu M. Roy et al.   IEEE ELECTRON DEVICE LETTERS

Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness

(2012) Zheng Wu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

(2012) A. Ashok Kumar et al.   JOURNAL OF ALLOYS AND COMPOUNDS

On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts

(2012) Winfried Mönch   JOURNAL OF APPLIED PHYSICS

Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers

(2012) A. V. Murel et al.   SEMICONDUCTORS

Barrier height enhancement and temperature dependence of the electrical characteristics of Al Schottky contacts on p-GaAs with organic Rhodamine B interfacial layer

(2012) Murat Soylu et al.   SUPERLATTICES AND MICROSTRUCTURES

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

(2011) Nicolas Reckinger et al.   APPLIED PHYSICS LETTERS

Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering

(2011) J. Chan et al.   APPLIED PHYSICS LETTERS

Impact of fixed charge on metal-insulator-semiconductor barrier height reduction

(2011) Jenny Hu et al.   APPLIED PHYSICS LETTERS

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

(2011) Shao-Ming Koh et al.   JOURNAL OF APPLIED PHYSICS

Schottky barriers in carbon nanotube-metal contacts

(2011) Johannes Svensson et al.   JOURNAL OF APPLIED PHYSICS

Role of Backbone Charge Rearrangement in the Bond-Dipole and Work Function of Molecular Monolayers

(2011) Tali Aqua et al.   Journal of Physical Chemistry C

Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

(2011) R. R. Lieten et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Effect of surface chemical composition on the work function of silicon substrates modified by binary self-assembled monolayers

(2011) Che-Hung Kuo et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface

(2011) Yoshifumi Nishi et al.   PHYSICAL REVIEW B

A superstructural 2D-phase diagram for Ga on the Si(111)- 7x7 system

(2011) Praveen Kumar et al.   SOLID STATE COMMUNICATIONS

Controlled modification of Schottky barrier height by partisan interlayer

(2011) Yang Li et al.   SOLID STATE COMMUNICATIONS

Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique

(2010) Yue Guo et al.   APPLIED PHYSICS LETTERS

Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films

(2010) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics

(2010) Yuki Matsuda et al.   Journal of Physical Chemistry C

Bidirectional Control of Silicon’s Surface Potential by Means of Molecular Coverage

(2010) Sreenivasa Reddy Puniredd et al.   Journal of Physical Chemistry C

Schottky barrier height modification in Au/n-type 6H–SiC structures by PbS interfacial layer

(2010) Y. Gülen et al.   MICROELECTRONIC ENGINEERING

Theoretical study of Schottky-barrier formation at epitaxial rare-earth-metal/semiconductor interfaces

(2010) Kris T. Delaney et al.   PHYSICAL REVIEW B

Electronic Structure of Self-Assembled Monolayers on Au(111) Surfaces: The Impact of Backbone Polarizability

(2009) LinJun Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

(2009) B. E. Coss et al.   APPLIED PHYSICS LETTERS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation

(2009) L.J. Brillson et al.   PHYSICA B-CONDENSED MATTER

First-principles study of the rectifying properties ofPt/TiO2interface

(2009) Tomoyuki Tamura et al.   PHYSICAL REVIEW B

Termination control of the interface dipole inLa0.7Sr0.3MnO3/Nb:SrTiO3(001) Schottky junctions

(2009) Yasuyuki Hikita et al.   PHYSICAL REVIEW B

Schottky barriers at transition-metal/SrTiO3(001)interfaces

(2009) M. Mrovec et al.   PHYSICAL REVIEW B

Understanding the electronic properties of molecule/metal junctions: The case study of thiols on gold

(2009) V. De Renzi   SURFACE SCIENCE

Intramolecular Dipole Coupling and Depolarization in Self-Assembled Monolayers

(2008) Maria L. Sushko et al.   ADVANCED FUNCTIONAL MATERIALS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation

(2008) Mantavya Sinha et al.   APPLIED PHYSICS LETTERS

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Influence of oxygen vacancies on Schottky contacts to ZnO

(2008) M. W. Allen et al.   APPLIED PHYSICS LETTERS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS

Modified NiSi∕Si Schottky Barrier Height by Nitrogen Implantation

(2008) Pankaj Kalra et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

(2008) Li Geng et al.   IEEE ELECTRON DEVICE LETTERS

Metal−Carbon Nanotube Contacts: The Link between Schottky Barrier and Chemical Bonding

(2008) Vincenzo Vitale et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

(2008) M. Mueller et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Ab initiostudy of atomic structure and Schottky barrier height at theGaAs/Ni0.5Pt0.5Geinterface

(2008) Manish K. Niranjan et al.   PHYSICAL REVIEW B

Barrier height at(Ba,Sr)TiO3/Ptinterfaces studied by photoemission

(2008) R. Schafranek et al.   PHYSICAL REVIEW B