High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth
出版年份 2018 全文链接
标题
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume -, Issue -, Pages 1803109
出版商
Wiley
发表日期
2018-07-19
DOI
10.1002/adma.201803109
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing
- (2017) C Tsakonas et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Two-dimensional black phosphorus: Synthesis, modification, properties, and applications
- (2017) Ya Yi et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Epitaxial Growth and Band Structure of Te Film on Graphene
- (2017) Xiaochun Huang et al. NANO LETTERS
- Three-dimensional integration of nanotechnologies for computing and data storage on a single chip
- (2017) Max M. Shulaker et al. NATURE
- High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
- (2017) Tsung-Ta Wu et al. Scientific Reports
- Stretchable, Skin-Mountable, and Wearable Strain Sensors and Their Potential Applications: A Review
- (2016) Morteza Amjadi et al. ADVANCED FUNCTIONAL MATERIALS
- Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis
- (2016) Wei Gao et al. NATURE
- Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation
- (2015) L Jiao et al. NEW JOURNAL OF PHYSICS
- Weyl Node and Spin Texture in Trigonal Tellurium and Selenium
- (2015) Motoaki Hirayama et al. PHYSICAL REVIEW LETTERS
- HfO2on UV–O3exposed transition metal dichalcogenides: interfacial reactions study
- (2015) Angelica Azcatl et al. 2D Materials
- Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
- (2014) Lu Ma et al. APPLIED PHYSICS LETTERS
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
- (2013) Stephen McDonnell et al. ACS Nano
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Novel Family of Chiral-Based Topological Insulators: Elemental Tellurium under Strain
- (2013) Luis A. Agapito et al. PHYSICAL REVIEW LETTERS
- Carrier transport in polycrystalline ITO and ZnO:Al II: The influence of grain barriers and boundaries
- (2007) Klaus Ellmer et al. THIN SOLID FILMS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now