Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

标题
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 101, Issue 22, Pages 223104
出版商
AIP Publishing
发表日期
2012-11-27
DOI
10.1063/1.4768218

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