High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

标题
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
作者
关键词
-
出版物
ACS Nano
Volume 9, Issue 10, Pages 10402-10410
出版商
American Chemical Society (ACS)
发表日期
2015-09-06
DOI
10.1021/acsnano.5b04611

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