Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam

标题
Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam
作者
关键词
-
出版物
NANO LETTERS
Volume 16, Issue 6, Pages 3788-3794
出版商
American Chemical Society (ACS)
发表日期
2016-05-06
DOI
10.1021/acs.nanolett.6b01186

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