High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
出版年份 2013 全文链接
标题
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 4, Pages 042104
出版商
AIP Publishing
发表日期
2013-01-30
DOI
10.1063/1.4789365
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
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