期刊
CHEMISTRY OF MATERIALS
卷 28, 期 12, 页码 4278-4283出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.6b01073
关键词
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资金
- National Natural Science Foundation of China (NSFC) [61390502, 21373068]
- National key Basic Research Program of China (973 Program) [2013CB632900]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [51521003]
- Self-Planned Task of the State Key Laboratory of Robotics and System (HIT) [SKLRS201607B]
- Royal Academy of Engineering (RAEng) Research Fellowship (Graphlex)
Two-dimensional (2D) layered semiconductors have emerged as a highly attractive class of materials for flexible and wearable strain sensor-centric devices such as electronic skin (e-skin). This is primarily due to their dimensionality, excellent mechanical flexibility, and unique electronic properties. However, the lack of effective and low-cost methods for wafer-scale fabrication of these materials for strain sensor arrays limits their potential for such applications. Here, we report growth of large-scale 2D In2Se3 nanosheets by templated chemical vapor deposition (CVD) method, using In2O3 and Se powders as precursors. The strain sensors fabricated from the as-grown 2D In2Se3 films show 2 orders of magnitude higher sensitivity (gauge factor similar to 237 in -0.39% to 0.39% uniaxial strain range along the device channel length) than what has been demonstrated from conventional metal-based (gauge factor: similar to 1-5) and graphene-based strain sensors (gauge factor: similar to 2-4) in a similar uniaxial strain range. The integrated strain sensor array, fabricated from the template-grown 2D In2Se3 films, exhibits a high spatial resolution of similar to 500 mu m in strain distribution. Our results demonstrate the applicability and highly attractive properties of 2D layered semiconductors in e-skins for robotics and human body motion monitoring.
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