Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

(2019) Jike Lyu et al.   ACS Applied Materials & Interfaces

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

(2018) K. Lee et al.   APPLIED PHYSICS LETTERS

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

(2018) J. Lyu et al.   APPLIED PHYSICS LETTERS

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

(2018) Tao Li et al.   Journal of Materials Chemistry C

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

(2018) Herng Yau Yoong et al.   ADVANCED FUNCTIONAL MATERIALS

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Epitaxial growth of YO1.5 doped HfO2 films on (100) YSZ substrates with various concentrations

(2017) Takao Shimizu et al.   FERROELECTRICS

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Stabilization of metastable phases in hafnia owing to surface energy effects

(2016) Rohit Batra et al.   APPLIED PHYSICS LETTERS

Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

(2016) Kiliha Katayama et al.   APPLIED PHYSICS LETTERS

Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

(2016) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)

(2016) M. Scigaj et al.   APPLIED PHYSICS LETTERS

Dramatic effect of thermal expansion mismatch on the structural, dielectric, ferroelectric and pyroelectric properties of low-cost epitaxial PZT films on SrTiO3and Si

(2016) R. Moalla et al.   CRYSTENGCOMM

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

(2016) Kiliha Katayama et al.   JOURNAL OF APPLIED PHYSICS

Annealing behavior of ferroelectric Si-doped HfO2 thin films

(2016) Patrick D. Lomenzo et al.   THIN SOLID FILMS

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

(2015) M. H. Park et al.   Journal of Materials Chemistry C

Antiferroelectricity in thin-filmZrO2from first principles

(2014) Sebastian E. Reyes-Lillo et al.   PHYSICAL REVIEW B

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Nonferroelectric contributions to the hysteresis cycles in manganite thin films: A comparative study of measurement techniques

(2011) I. Fina et al.   JOURNAL OF APPLIED PHYSICS