Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Role of Oxygen Vacancies at the TiO 2 /HfO 2 Interface in Flexible Oxide‐Based Resistive Switching Memory

(2019) Rulin Zhang et al.   Advanced Electronic Materials

Significance of interface barrier at electrode of hematite hydroelectric cell for generating ecopower by water splitting

(2019) Shipra Jain et al.   INTERNATIONAL JOURNAL OF ENERGY RESEARCH

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Characterization of HfO 2 -based devices with indication of second order memristor effects

(2018) A. Rodriguez-Fernandez et al.   MICROELECTRONIC ENGINEERING

Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing

(2018) S. Karwal et al.   Journal of Materials Chemistry C

Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

(2018) Franz P. G. Fengler et al.   Advanced Electronic Materials

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectric phase stabilization of HfO2by nitrogen doping

(2016) Lun Xu et al.   Applied Physics Express

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

(2016) C. Rodenbücher et al.   APPLIED PHYSICS LETTERS

Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment

(2016) Yunfeng Lai et al.   APPLIED PHYSICS LETTERS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics

(2016) C.Y. Zheng et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Functional materials for information and energy technology: Insights by photoelectron spectroscopy

(2016) Martina Müller et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Thermodynamic stability and control of oxygen reactivity at functional oxide interfaces: EuO on ITO

(2016) Timm Gerber et al.   Journal of Materials Chemistry C

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO[sub 2] Dielectric Films by In Situ NH[sub 3] Injection

(2009) Jeong Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Chemical controllability of charge states of nitrogen-related defects inHfOxNy: First-principles calculations

(2008) N. Umezawa et al.   PHYSICAL REVIEW B