Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method

(2020) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

(2020) Saul Estandía et al.   CRYSTAL GROWTH & DESIGN

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

(2020) Milena Cervo Sulzbach et al.   ADVANCED FUNCTIONAL MATERIALS

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

(2019) Jike Lyu et al.   ACS Applied Materials & Interfaces

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopy

(2019) Tony Schenk et al.   ACTA MATERIALIA

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf 0.5 Zr 0.5 O 2 Tunnel Junctions

(2019) Milena Cervo Sulzbach et al.   Advanced Electronic Materials

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

(2018) F. P. G. Fengler et al.   JOURNAL OF APPLIED PHYSICS

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering

(2018) Taisei Suzuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

(2017) Rohit Batra et al.   Journal of Physical Chemistry C

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

(2017) Fei Huang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Nonferroelectric contributions to the hysteresis cycles in manganite thin films: A comparative study of measurement techniques

(2011) I. Fina et al.   JOURNAL OF APPLIED PHYSICS