Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

(2020) Ji-Hyun Hur   Scientific Reports

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations

(2018) Anastasia Chouprik et al.   ACS Applied Materials & Interfaces

Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

(2018) N. Gong et al.   APPLIED PHYSICS LETTERS

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

(2018) F. P. G. Fengler et al.   JOURNAL OF APPLIED PHYSICS

Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

(2018) Franz P. G. Fengler et al.   Advanced Electronic Materials

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

(2018) Tae Yoon Lee et al.   ACS Applied Materials & Interfaces

Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

(2018) Damir R. Islamov et al.   ACTA MATERIALIA

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Mechanisms of aging and fatigue in ferroelectrics

(2015) Yuri A. Genenko et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

(2015) Chao Li et al.   Nano Research

Impact of charge trapping on the ferroelectric switching behavior of doped HfO2

(2015) Milan Pešić et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Mechanisms of aging and fatigue in ferroelectrics

(2015) Yuri A. Genenko et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

(2013) Y. S. Lin et al.   JOURNAL OF APPLIED PHYSICS

Multilevel resistive switching in ternary HfxAl1−xOy oxide with graded Al depth profile

(2013) A. Markeev et al.   MICROELECTRONIC ENGINEERING

Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films

(2011) Sufi Zafar et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Band excitation in scanning probe microscopy: sines of change

(2011) Stephen Jesse et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS