TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

VO2 /TiN Plasmonic Thermochromic Smart Coatings for Room-Temperature Applications

(2018) Qi Hao et al.   ADVANCED MATERIALS

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

(2018) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

(2018) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Glass-to-glass anodic bonding using TiNx interlayers for fully transparent device applications

(2011) Piotr Mrozek   SENSORS AND ACTUATORS A-PHYSICAL