Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs

(2020) Shen-Yang Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors

(2019) Harshit Agarwal et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors

(2019) Jiuren Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Design and performance enhancement of doping-less field effect transistor with the help of negative capacitance technique

(2019) Lubna Gajal et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor

(2018) Zhongyuan Lu et al.   APPLIED PHYSICS LETTERS

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

(2018) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Effects of the Variation of ${V}_{\text {GS}}$ Sweep Range on the Performance of Negative Capacitance FETs

(2018) Jiuren Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Engineering Negative Differential Resistance in NCFETs for Analog Applications

(2018) Harshit Agarwal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx

(2018) Jiuren Zhou et al.   IEEE Journal of the Electron Devices Society

Negative Capacitance Transistors

(2018) Justin C. Wong et al.   PROCEEDINGS OF THE IEEE

Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors

(2018) Jiuren Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

(2017) Jiuren Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Evaluation of Negative Capacitance Ferroelectric MOSFET for Analog Circuit Applications

(2017) Yang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Device-Circuit Analysis of Ferroelectric FETs for Low-Power Logic

(2017) Shreya Gupta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate Region

(2017) Jiuren Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack

(2017) Amirhasan Nourbakhsh et al.   Nanoscale

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Electrical characteristics of MoS2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure

(2016) Takuhei Kobayashi et al.   APPLIED PHYSICS LETTERS

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

(2016) Jaesung Jo et al.   IEEE ELECTRON DEVICE LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model Validation

(2016) Girish Pahwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Temperature-dependent transport and hysteretic behaviors induced by interfacial states in MoS2 field-effect transistors with lead-zirconate-titanate ferroelectric gating

(2016) Yilin Sun et al.   NANOTECHNOLOGY

Negative capacitance in multidomain ferroelectric superlattices

(2016) Pavlo Zubko et al.   NATURE

Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure

(2016) Yu Jin Kim et al.   Scientific Reports

Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories

(2015) Alexey Lipatov et al.   ACS Nano

Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics

(2015) Xudong Wang et al.   ADVANCED MATERIALS

High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

(2015) Young Tack Lee et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

(2012) Hong Li et al.   ADVANCED FUNCTIONAL MATERIALS

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

MoS2Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel

(2012) Hee Sung Lee et al.   Small

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Spin-transfer torque RAM technology: Review and prospect

(2011) T. Kawahara et al.   MICROELECTRONICS RELIABILITY

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

(2010) Takeshi Horiuchi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS