Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications
出版年份 2014 全文链接
标题
Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications
作者
关键词
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出版物
NANOTECHNOLOGY
Volume 25, Issue 20, Pages 205201
出版商
IOP Publishing
发表日期
2014-05-01
DOI
10.1088/0957-4484/25/20/205201
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