Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
出版年份 2014 全文链接
标题
Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 105, Issue 19, Pages 192903
出版商
AIP Publishing
发表日期
2014-11-15
DOI
10.1063/1.4902072
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes
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- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
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- Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes
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- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
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- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
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- Ferroelectricity in yttrium-doped hafnium oxide
- (2011) J. Müller et al. JOURNAL OF APPLIED PHYSICS
- Grain boundary mediated leakage current in polycrystalline HfO2 films
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- The Inlaid Al2O3Tunnel Switch for Ultrathin Ferroelectric Films
- (2009) An Quan Jiang et al. ADVANCED MATERIALS
- Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films
- (2009) Michael Shandalov et al. JOURNAL OF APPLIED PHYSICS
- Growth Behavior of Atomic-Layer-Deposited Pb(Zr,Ti)O[sub x] Thin Films on Planar Substrate and Three-Dimensional Hole Structures
- (2008) Takayuki Watanabe et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Band offsets of ultrathin high-κoxide films with Si
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