O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Gate Oxides Beyond SiO2

(2011) Darrell G. Schlom et al.   MRS BULLETIN

The role of La surface chemistry in the passivation of Ge

(2010) A. Dimoulas et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

(2009) S. Abermann et al.   APPLIED PHYSICS LETTERS

Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

(2009) L. Lamagna et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks

(2009) D. Tsoutsou et al.   APPLIED PHYSICS LETTERS

Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

(2009) Yi Zhao et al.   APPLIED PHYSICS LETTERS

H[sub 2]O- and O[sub 3]-Based Atomic Layer Deposition of High-κ Dielectric Films on GeO[sub 2] Passivation Layers

(2009) A. Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer

(2009) X. L. Li et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Metal-oxide-semiconductor devices on p-type Ge with La[sub 2]O[sub 3] and ZrO[sub 2]/La[sub 2]O[sub 3] as gate dielectric and the effect of postmetallization anneal

(2009) S. F. Galata et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices

(2009) C. Andersson et al.   MICROELECTRONIC ENGINEERING

Post metallization annealing study in La2O3/Ge MOS structure

(2009) J. Song et al.   MICROELECTRONIC ENGINEERING

Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone

(2009) B. Lee et al.   MICROELECTRONIC ENGINEERING

Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

(2009) D. Rébiscoul et al.   MICROELECTRONIC ENGINEERING

First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

(2008) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

(2008) G. Mavrou et al.   APPLIED PHYSICS LETTERS

Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization

(2008) Koji Kita et al.   APPLIED SURFACE SCIENCE

Detection of a Formate Surface Intermediate in the Atomic Layer Deposition of High-κ Dielectrics Using Ozone

(2008) Jinhee Kwon et al.   CHEMISTRY OF MATERIALS

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

(2008) Jaakko Niinistö et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management

(2008) Byoung Hun Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Maximizing performance for higher K gate dielectrics

(2008) John Robertson   JOURNAL OF APPLIED PHYSICS

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

(2008) G. Mavrou et al.   JOURNAL OF APPLIED PHYSICS

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks

(2008) S. Schamm et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

(2008) D. Tsoutsou et al.   MICROELECTRONIC ENGINEERING

Applications of atomic layer deposition to nanofabrication and emerging nanodevices

(2008) Hyungjun Kim et al.   THIN SOLID FILMS

Physical and Electrical Properties of Atomic-Layer-Deposited Hf[sub x]Zr[sub 1−x]O[sub 2] with TEMAHf, TEMAZr, and Ozone

(2007) D. H. Triyoso et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY