Metal-oxide-semiconductor devices on p-type Ge with La[sub 2]O[sub 3] and ZrO[sub 2]/La[sub 2]O[sub 3] as gate dielectric and the effect of postmetallization anneal
Metal-oxide-semiconductor devices on p-type Ge with La[sub 2]O[sub 3] and ZrO[sub 2]/La[sub 2]O[sub 3] as gate dielectric and the effect of postmetallization anneal
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