Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

标题
Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 93, Issue 10, Pages 102115
出版商
AIP Publishing
发表日期
2008-09-15
DOI
10.1063/1.2972123

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