Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks

(2009) D. Tsoutsou et al.   APPLIED PHYSICS LETTERS

Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium

(2009) D. Tsoutsou et al.   MICROELECTRONIC ENGINEERING

First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

(2008) H. J. Na et al.   APPLIED PHYSICS LETTERS

Evidence of dangling bond electrical activity at the Ge/oxide interface

(2008) Silvia Baldovino et al.   APPLIED PHYSICS LETTERS

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

(2008) G. Mavrou et al.   APPLIED PHYSICS LETTERS

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

(2008) P. Tsipas et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Interface control of high-k gate dielectrics on Ge

(2008) M. Caymax et al.   APPLIED SURFACE SCIENCE

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations

(2008) Dominik Fischer et al.   JOURNAL OF APPLIED PHYSICS

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

(2008) G. Mavrou et al.   JOURNAL OF APPLIED PHYSICS

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks

(2008) S. Schamm et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B