Maximizing performance for higher K gate dielectrics

SmScO3 thin films as an alternative gate dielectric

(2008) E. Durğun Özben et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer

(2008) Dina H. Triyoso et al.   IEEE ELECTRON DEVICE LETTERS

Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management

(2008) Byoung Hun Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characteristics of thin lanthanum lutetium oxide high-k dielectrics

(2008) Dina H. Triyoso et al.   MICROELECTRONIC ENGINEERING

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

(2007) Huang-Chun Wen et al.   MICROELECTRONIC ENGINEERING