Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors
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Title
Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 23, Pages 234502
Publisher
AIP Publishing
Online
2015-06-18
DOI
10.1063/1.4922714
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