Edge Effects in Bottom-Gate Inverted Staggered Thin-Film Transistors

Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

(2012) Sung-Hwan Choi et al.   APPLIED PHYSICS LETTERS

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

(2012) Andreas Tsormpatzoglou et al.   IEEE ELECTRON DEVICE LETTERS

Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths

(2011) Mallory Mativenga et al.   APPLIED PHYSICS LETTERS

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

(2011) Joon Seok Park et al.   THIN SOLID FILMS

Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes

(2010) Jae Sang Lee et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Thin-Film Transistors

(2009) Robert A. Street   ADVANCED MATERIALS

Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors

(2009) A. Valletta et al.   THIN SOLID FILMS

Stress-Induced Hump Effects of p-Channel Polycrystalline Silicon Thin-Film Transistors

(2008) Ching-Fang Huang et al.   IEEE ELECTRON DEVICE LETTERS

“Hump” characteristics and edge effects in polysilicon thin film transistors

(2008) A. Valletta et al.   JOURNAL OF APPLIED PHYSICS