Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay

(2010) Dong Hee Lee et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Electronic structure ofIn2O3and Sn-dopedIn2O3by hard x-ray photoemission spectroscopy

(2010) C. Körber et al.   PHYSICAL REVIEW B

Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

(2009) Yoichi Ogo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Trap densities in amorphous-InGaZnO4 thin-film transistors

(2008) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS