A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

Title
A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 13, Pages 134501
Publisher
AIP Publishing
Online
2014-04-03
DOI
10.1063/1.4870457

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started