Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor
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Title
Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 12, Pages 123502
Publisher
AIP Publishing
Online
2012-09-18
DOI
10.1063/1.4752238
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Related references
Note: Only part of the references are listed.- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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- Interface and bulk effects for bias—light-illumination instability in amorphous-In—Ga—Zn—O thin-film transistors
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- Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
- (2010) S. J. Clark et al. PHYSICAL REVIEW B
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
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- (2009) Anderson Janotti et al. REPORTS ON PROGRESS IN PHYSICS
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- Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO
- (2008) R. Laiho et al. JOURNAL OF APPLIED PHYSICS
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