Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide

(2012) Piero Migliorato et al.   APPLIED PHYSICS LETTERS

Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets

(2012) Mallory Mativenga et al.   SOLID STATE COMMUNICATIONS

Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

(2012) Mallory Mativenga et al.   AIP Advances

DC Versus Pulse-Type Negative Bias Stress Effects on the Instability of Amorphous InGaZnO Transistors Under Light Illumination

(2011) Youn-Gyoung Chang et al.   IEEE ELECTRON DEVICE LETTERS

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors

(2011) Sangwook Kim et al.   SOLID-STATE ELECTRONICS

Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination

(2011) T.C. Chen et al.   THIN SOLID FILMS

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

(2010) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor

(2010) Hiromichi Godo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals

(2010) S. J. Clark et al.   PHYSICAL REVIEW B

Material characteristics and applications of transparent amorphous oxide semiconductors

(2010) Toshio Kamiya et al.   NPG Asia Materials

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

(2009) Kwang-Hee Lee et al.   APPLIED PHYSICS LETTERS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

(2009) Toshio Kamiya et al.   Journal of Display Technology