Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors
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Title
Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 11, Pages 114503
Publisher
AIP Publishing
Online
2011-12-02
DOI
10.1063/1.3662869
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Related references
Note: Only part of the references are listed.- Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
- (2011) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
- O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
- (2010) Byungki Ryu et al. APPLIED PHYSICS LETTERS
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
- (2010) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
- Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
- (2010) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
- (2010) Chih-Tsung Tsai et al. APPLIED PHYSICS LETTERS
- The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination
- (2010) Joon Seok Park et al. APPLIED PHYSICS LETTERS
- Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors
- (2010) Mallory Mativenga et al. IEEE ELECTRON DEVICE LETTERS
- The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors
- (2009) Jaeseob Lee et al. APPLIED PHYSICS LETTERS
- Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
- (2009) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Gate-bias stress in amorphous oxide semiconductors thin-film transistors
- (2009) M. E. Lopes et al. APPLIED PHYSICS LETTERS
- Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors
- (2009) Ken Hoshino et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
- (2009) Tze-Ching Fung et al. Journal of Display Technology
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- (2008) A. Suresh et al. APPLIED PHYSICS LETTERS
- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
- Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
- (2008) N Xu et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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