Electronic properties of single-layer and multilayer transition metal dichalcogenidesMX2(M= Mo, W andX= S, Se)

Few-Layer MoS2: A Promising Layered Semiconductor

(2014) Rudren Ganatra et al.   ACS Nano

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Band structure engineering of monolayer MoS2 on h-BN: first-principles calculations

(2014) Zongyu Huang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electronic Structure of a Quasi-Freestanding MoS2 Monolayer

(2014) T. Eknapakul et al.   NANO LETTERS

Spin and pseudospins in layered transition metal dichalcogenides

(2014) Xiaodong Xu et al.   Nature Physics

Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2

(2014) Wen Huang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Defect-induced conductivity anisotropy in MoS2monolayers

(2014) Mahdi Ghorbani-Asl et al.   PHYSICAL REVIEW B

Large spin splitting in the conduction band of transition metal dichalcogenide monolayers

(2014) K. Kośmider et al.   PHYSICAL REVIEW B

Andreev reflection in monolayer MoS2

(2014) Leyla Majidi et al.   PHYSICAL REVIEW B

Effect of point defects on the optical and transport properties ofMoS2andWS2

(2014) Shengjun Yuan et al.   PHYSICAL REVIEW B

Quantum Spin Hall Effect in Two-Dimensional Crystals of Transition-Metal Dichalcogenides

(2014) M. A. Cazalilla et al.   PHYSICAL REVIEW LETTERS

Exciton Binding Energy and Nonhydrogenic Rydberg Series in MonolayerWS2

(2014) Alexey Chernikov et al.   PHYSICAL REVIEW LETTERS

Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet

(2013) Yeung Yu Hui et al.   ACS Nano

Valley Carrier Dynamics in Monolayer Molybdenum Disulfide from Helicity-Resolved Ultrafast Pump–Probe Spectroscopy

(2013) Qinsheng Wang et al.   ACS Nano

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Temperature-dependent phonon shifts in monolayer MoS2

(2013) Nicholas A. Lanzillo et al.   APPLIED PHYSICS LETTERS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(2013) Deep Jariwala et al.   APPLIED PHYSICS LETTERS

Line Defects in Molybdenum Disulfide Layers

(2013) Andrey N. Enyashin et al.   Journal of Physical Chemistry C

Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy

(2013) Chung-Chiang Wu et al.   Journal of Physical Chemistry Letters

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

(2013) Wu Zhou et al.   NANO LETTERS

Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2

(2013) Weijie Zhao et al.   NANO LETTERS

Local Strain Engineering in Atomically Thin MoS2

(2013) Andres Castellanos-Gomez et al.   NANO LETTERS

Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors

(2013) Vinod K. Sangwan et al.   NANO LETTERS

Optical generation of excitonic valley coherence in monolayer WSe2

(2013) Aaron M. Jones et al.   Nature Nanotechnology

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

(2013) Yi Zhang et al.   Nature Nanotechnology

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2

(2013) Sanfeng Wu et al.   Nature Physics

Electronic structures and magnetic properties of MoS2 nanostructures: atomic defects, nanoholes, nanodots and antidots

(2013) Yungang Zhou et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Interactions and superconductivity in heavily doped MoS2

(2013) R. Roldán et al.   PHYSICAL REVIEW B

Quasiparticle band structures and optical properties of strained monolayer MoS2and WS2

(2013) Hongliang Shi et al.   PHYSICAL REVIEW B

Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

(2013) Gui-Bin Liu et al.   PHYSICAL REVIEW B

Theory of neutral and charged excitons in monolayer transition metal dichalcogenides

(2013) Timothy C. Berkelbach et al.   PHYSICAL REVIEW B

Structure change, layer sliding, and metallization in high-pressure MoS2

(2013) Liliana Hromadová et al.   PHYSICAL REVIEW B

Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

(2013) H. Ochoa et al.   PHYSICAL REVIEW B

Spin- and valley-dependent magneto-optical properties of MoS2

(2013) Félix Rose et al.   PHYSICAL REVIEW B

Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

(2013) Wen-Yu Shan et al.   PHYSICAL REVIEW B

Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides

(2013) M. Ghorbani-Asl et al.   PHYSICAL REVIEW B

Effective lattice Hamiltonian for monolayer MoS2: Tailoring electronic structure with perpendicular electric and magnetic fields

(2013) Habib Rostami et al.   PHYSICAL REVIEW B

Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

(2013) H. Sahin et al.   PHYSICAL REVIEW B

Spin-orbit-mediated spin relaxation in monolayer MoS2

(2013) H. Ochoa et al.   PHYSICAL REVIEW B

Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

(2013) S. Horzum et al.   PHYSICAL REVIEW B

Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS2

(2013) Alejandro Molina-Sánchez et al.   PHYSICAL REVIEW B

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

(2013) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2

(2013) E. Cappelluti et al.   PHYSICAL REVIEW B

Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions

(2013) Hai-Zhou Lu et al.   PHYSICAL REVIEW LETTERS

Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy

(2013) Wencan Jin et al.   PHYSICAL REVIEW LETTERS

Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

(2013) Zhirui Gong et al.   Nature Communications

Electrical control of neutral and charged excitons in a monolayer semiconductor

(2013) Jason S. Ross et al.   Nature Communications

Single-layer MoS2 as an efficient photocatalyst

(2013) Yunguo Li et al.   Catalysis Science & Technology

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons

(2013) Sefaattin Tongay et al.   Scientific Reports

A generic tight-binding model for monolayer, bilayer and bulk MoS2

(2013) Ferdows Zahid et al.   AIP Advances

Electric-Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling

(2012) Andres Castellanos-Gomez et al.   ADVANCED MATERIALS

Elastic Properties of Freely Suspended MoS2Nanosheets

(2012) Andres Castellanos-Gomez et al.   ADVANCED MATERIALS

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS2

(2012) Kouji Taniguchi et al.   APPLIED PHYSICS LETTERS

Collective transport of coupled particles

(2012) D. Hennig et al.   EUROPEAN PHYSICAL JOURNAL B

Tuning the Electronic and Magnetic Properties of MoS2 Nanoribbons by Strain Engineering

(2012) Hui Pan et al.   Journal of Physical Chemistry C

Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach

(2012) Hong Jiang   Journal of Physical Chemistry C

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

Tightly bound trions in monolayer MoS2

(2012) Kin Fai Mak et al.   NATURE MATERIALS

Valley polarization in MoS2 monolayers by optical pumping

(2012) Hualing Zeng et al.   Nature Nanotechnology

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Strain-engineered artificial atom as a broad-spectrum solar energy funnel

(2012) Ji Feng et al.   Nature Photonics

First-principles study of strained 2D MoS2

(2012) E. Scalise et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes

(2012) Peng Lu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Robust optical emission polarization in MoS2monolayers through selective valley excitation

(2012) G. Sallen et al.   PHYSICAL REVIEW B

Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

(2012) Wanxiang Feng et al.   PHYSICAL REVIEW B

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Effects of strain on band structure and effective masses in MoS2

(2012) H. Peelaers et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Superconducting Dome in a Gate-Tuned Band Insulator

(2012) J. T. Ye et al.   SCIENCE

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Electronic structure of a single MoS2 monolayer

(2012) Eugene S. Kadantsev et al.   SOLID STATE COMMUNICATIONS

Valley-selective circular dichroism of monolayer molybdenum disulphide

(2012) Ting Cao et al.   Nature Communications

Electronic and optical properties of vacancy-doped WS2 monolayers

(2012) Jian-wei Wei et al.   AIP Advances

The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

(2011) Jason K. Ellis et al.   APPLIED PHYSICS LETTERS

Functionalization of Single-Layer MoS2 Honeycomb Structures

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers

(2011) Yandong Ma et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS