A generic tight-binding model for monolayer, bilayer and bulk MoS2

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

(2012) Khairul Alam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of strain on band structure and effective masses in MoS2

(2012) H. Peelaers et al.   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

(2011) Jason K. Ellis et al.   APPLIED PHYSICS LETTERS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Improved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections

(2010) Tomáš Bučko et al.   JOURNAL OF PHYSICAL CHEMISTRY A

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

(2010) Yoon-Suk Kim et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

(2009) M. Usman et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

Accurate band structures and effective masses for InP, InAs, and InSb using hybrid functionals

(2009) Yoon-Suk Kim et al.   PHYSICAL REVIEW B