Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2

Layer-by-Layer Thinning of MoS2 by Plasma

(2013) Yulu Liu et al.   ACS Nano

Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers

(2013) Wen Huang et al.   JOURNAL OF APPLIED PHYSICS

Interlayer Breathing and Shear Modes in Few-Trilayer MoS2 and WSe2

(2013) Yanyuan Zhao et al.   NANO LETTERS

Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2

(2013) Weijie Zhao et al.   NANO LETTERS

First-principles study of the lattice dynamics of Sb2S3

(2013) Yun Liu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Anomalous frequency trends in MoS2thin films attributed to surface effects

(2013) Xin Luo et al.   PHYSICAL REVIEW B

Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS2

(2013) Alejandro Molina-Sánchez et al.   PHYSICAL REVIEW B

A generic tight-binding model for monolayer, bilayer and bulk MoS2

(2013) Ferdows Zahid et al.   AIP Advances

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

(2012) A. Kumar et al.   EUROPEAN PHYSICAL JOURNAL B

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

(2011) Jason K. Ellis et al.   APPLIED PHYSICS LETTERS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Full dispersion versus Debye model evaluation of lattice thermal conductivity with a Landauer approach

(2011) Changwook Jeong et al.   JOURNAL OF APPLIED PHYSICS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

(2011) Abhijeet Paul et al.   Journal of Computational Electronics

MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior

(2010) Vikas Varshney et al.   COMPUTATIONAL MATERIALS SCIENCE

On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients

(2010) Changwook Jeong et al.   JOURNAL OF APPLIED PHYSICS

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Graphene: Status and Prospects

(2009) A. K. Geim   SCIENCE

Complex thermoelectric materials

(2008) G. Jeffrey Snyder et al.   NATURE MATERIALS