Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

Electronic structure of boron nitride sheets doped with carbon from first-principles calculations

(2013) Natalia Berseneva et al.   PHYSICAL REVIEW B

Magnetic properties of MoS2: Existence of ferromagnetism

(2012) Sefaattin Tongay et al.   APPLIED PHYSICS LETTERS

Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

(2012) C. Ataca et al.   Journal of Physical Chemistry C

Electronic structure investigation of MoS2and MoSe2using angle-resolved photoemission spectroscopy andab initioband structure studies

(2012) S K Mahatha et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

(2011) Jason K. Ellis et al.   APPLIED PHYSICS LETTERS

Raman Spectroscopy of Graphene and Bilayer under Biaxial Strain: Bubbles and Balloons

(2011) Jakob Zabel et al.   NANO LETTERS

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane

(2011) Pierluigi Cudazzo et al.   PHYSICAL REVIEW B

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

Phonon Raman scattering of perovskite LaNiO3 thin films

(2010) N. Chaban et al.   APPLIED PHYSICS LETTERS

Strong Charge-Transfer Excitonic Effects and the Bose-Einstein Exciton Condensate in Graphane

(2010) Pierluigi Cudazzo et al.   PHYSICAL REVIEW LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

(2009) T. M. G. Mohiuddin et al.   PHYSICAL REVIEW B

Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy

(2009) M. Huang et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA