Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons

Atomic-scale structures and electronic states of defects on Ar+-ion irradiated MoS2

(2013) Akihiro Inoue et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating

(2013) Sefaattin Tongay et al.   NANO LETTERS

Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

(2013) H. Sahin et al.   PHYSICAL REVIEW B

Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

(2013) S. Horzum et al.   PHYSICAL REVIEW B

Electrical control of neutral and charged excitons in a monolayer semiconductor

(2013) Jason S. Ross et al.   Nature Communications

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films

(2013) Yifei Yu et al.   Scientific Reports

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

Magnetism in MoS2 induced by proton irradiation

(2012) S. Mathew et al.   APPLIED PHYSICS LETTERS

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

(2012) Sefaattin Tongay et al.   NANO LETTERS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

Tightly bound trions in monolayer MoS2

(2012) Kin Fai Mak et al.   NATURE MATERIALS

Electrical control of optical properties of monolayer MoS2

(2012) A.K.M. Newaz et al.   SOLID STATE COMMUNICATIONS

Visibility of dichalcogenide nanolayers

(2011) M M Benameur et al.   NANOTECHNOLOGY

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS