Perspective: New process technologies required for future devices and scaling

A graphene integrated highly transparent resistive switching memory device

(2018) Sita Dugu et al.   APL Materials

In-line metrology for roll-to-roll UV assisted nanoimprint lithography using diffractometry

(2018) Martin Kreuzer et al.   APL Materials

Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy

(2018) T. Nuytten et al.   APL Materials

Preface: Materials, metrology, and modeling for a future beyond CMOS technology

(2018) G. Andrew Antonelli et al.   APL Materials

Relation between film thickness and surface doping of MoS2 based field effect transistors

(2018) César J. Lockhart de la Rosa et al.   APL Materials

Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

(2018) G. Conti et al.   APL Materials

Highly Scaled Ruthenium Interconnects

(2017) Shibesh Dutta et al.   IEEE ELECTRON DEVICE LETTERS

Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD

(2017) Paul C. Lemaire et al.   JOURNAL OF CHEMICAL PHYSICS

Benefits of atomic-level processing by quasi-ALE and ALD technique

(2017) M Honda et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Correcting defects in area selective molecular layer deposition

(2017) Richard G. Closser et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Enabling Simultaneous Extreme Ultra Low-k in Stiff, Resilient, and Thermally Stable Nano-Architected Materials

(2017) Max L. Lifson et al.   NANO LETTERS

Commercialize quantum technologies in five years

(2017) Masoud Mohseni et al.   NATURE

Beyond Moore’s technologies: operation principles of a superconductor alternative

(2017) Igor I Soloviev et al.   Beilstein Journal of Nanotechnology

Synthesis and chemistry of elemental 2D materials

(2017) Andrew J. Mannix et al.   Nature Reviews Chemistry

Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal–Dielectric Patterns

(2016) Fatemeh Sadat Minaye Hashemi et al.   ACS Applied Materials & Interfaces

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

Electron mean free path in elemental metals

(2016) Daniel Gall   JOURNAL OF APPLIED PHYSICS

Combinatorial survey of fluorinated plasma etching in the silicon-oxygen-carbon-nitrogen-hydrogen system

(2016) Shailesh Dhungana et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion

(2016) Steven Consiglio et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Porosity scaling strategies for low-k films

(2015) David J. Michalak et al.   JOURNAL OF MATERIALS RESEARCH

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

(2015) Henry H. Radamson et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Overview of atomic layer etching in the semiconductor industry

(2015) Keren J. Kanarik et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost

(2015) Burn J. Lin   MICROELECTRONIC ENGINEERING

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Atomic Layer Etching: An Industry Perspective

(2015) C. T. Carver et al.   ECS Journal of Solid State Science and Technology

1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

(2014) Ba-Son Nguyen et al.   APPLIED PHYSICS LETTERS

The use of atomic layer deposition in advanced nanopatterning

(2014) A. J. M. Mackus et al.   Nanoscale

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

(2014) T. E. Kazior   PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

Emerging Applications for High K Materials in VLSI Technology

(2014) Robert Clark   Materials

Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

(2014) Alfred Grill et al.   Applied Physics Reviews

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers

(2011) Yeung Au et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

(2011) H. B. Profijt et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Bottom-Up Filling in Electroless Plating with an Addition of PEG–PPG Triblock Copolymers

(2010) Zhifeng Yang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Area-Selective ALD with Soft Lithographic Methods: Using Self-Assembled Monolayers to Direct Film Deposition

(2009) Xirong Jiang et al.   Journal of Physical Chemistry C

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS