Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 26, Issue 7, Pages 4584-4603Publisher
SPRINGER
DOI: 10.1007/s10854-015-3123-z
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This article reviews the selective epitaxy growth of intrinsic, B- and C-doped SiGe layers on recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A detailed empirical model for the growth, integration issues including epitaxy quality, selectivity, dopant incorporation, and pattern dependency (or loading effect) is presented.
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