Oxygen vacancies effects in a-IGZO: Formation mechanisms, hysteresis, and negative bias stress effects
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Oxygen vacancies effects in a-IGZO: Formation mechanisms, hysteresis, and negative bias stress effects
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 214, Issue 6, Pages 1600889
Publisher
Wiley
Online
2017-03-02
DOI
10.1002/pssa.201600889
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Conduction mechanism in amorphous InGaZnO thin film transistors
- (2015) Ajay Bhoolokam et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Flexible In-Ga-Zn-O thin-film transistors fabricated on polyimide substrates and mechanically induced instability under negative bias illumination stress
- (2015) Jozeph Park et al. JOURNAL OF ELECTROCERAMICS
- Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects
- (2015) A de Jamblinne de Meux et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy
- (2015) Sungsik Lee et al. Scientific Reports
- Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed
- (2015) Y.-J. Chen et al. ECS Solid State Letters
- Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior
- (2015) W. H. Han et al. Physical Review Applied
- Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
- (2015) Youngho Kang et al. Advanced Electronic Materials
- Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method
- (2014) Wei Hu et al. ACS Applied Materials & Interfaces
- Light induced instability mechanism in amorphous InGaZn oxide semiconductors
- (2014) John Robertson et al. APPLIED PHYSICS LETTERS
- Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen
- (2014) S. Sallis et al. APPLIED PHYSICS LETTERS
- Current hysteresis by oxygen vacancy exchange between oxides in Pt/a-IGZO/TaOx/W
- (2014) Hyeon-Min Kwon et al. APPLIED SURFACE SCIENCE
- First-principles calculations for point defects in solids
- (2014) Christoph Freysoldt et al. REVIEWS OF MODERN PHYSICS
- Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere
- (2013) Ken Watanabe et al. APPLIED PHYSICS LETTERS
- Origin of subgap states in amorphous In-Ga-Zn-O
- (2013) Wolfgang Körner et al. JOURNAL OF APPLIED PHYSICS
- Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors
- (2013) Hyeon-Kyun Noh et al. JOURNAL OF APPLIED PHYSICS
- Modeling Sub-Threshold Current–Voltage Characteristics in Thin Film Transistors
- (2013) Sungsik Lee et al. Journal of Display Technology
- Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications
- (2013) Manoj Nag et al. Journal of the Society for Information Display
- Dielectric properties and Raman spectra of ZnO from a first principles finite-differences/finite-fields approach
- (2013) Arrigo Calzolari et al. Scientific Reports
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory
- (2012) Moon-Seok Kim et al. APPLIED PHYSICS LETTERS
- Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
- (2012) Hyo Jin Kim et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state
- (2012) Ho-Hyun Nahm et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Finite-size supercell correction schemes for charged defect calculations
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
- (2011) Kwang Hwan Ji et al. APPLIED PHYSICS LETTERS
- Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible Substrate
- (2011) Dong Hee Lee et al. IEEE ELECTRON DEVICE LETTERS
- VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data
- (2011) Koichi Momma et al. JOURNAL OF APPLIED CRYSTALLOGRAPHY
- Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
- (2011) Hyeon-Kyun Noh et al. PHYSICAL REVIEW B
- Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
- (2011) Sooyeon Hwang et al. THIN SOLID FILMS
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
- (2010) Byungki Ryu et al. APPLIED PHYSICS LETTERS
- Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors
- (2010) Shou-En Liu et al. IEEE ELECTRON DEVICE LETTERS
- Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory
- (2010) Toshio Kamiya et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Electrostatic interactions between charged defects in supercells
- (2010) Christoph Freysoldt et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- The effect of annealing on amorphous indium gallium zinc oxide thin film transistors
- (2010) Hyeon-seok Bae et al. THIN SOLID FILMS
- Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states
- (2009) Toshio Kamiya et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations
- (2009) Christoph Freysoldt et al. PHYSICAL REVIEW LETTERS
- Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Trap densities in amorphous-InGaZnO4 thin-film transistors
- (2008) Mutsumi Kimura et al. APPLIED PHYSICS LETTERS
- Bulk-Limited Current Conduction in Amorphous InGaZnO Thin Films
- (2008) Hyun-Joong Chung et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search