Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

Published 2015 View Full Article

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Title
Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 8, Pages 766-768
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-06-16
DOI
10.1109/led.2015.2445352

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