Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics

Published 2016 View Full Article

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Title
Self-compliance Pt/HfO2/Ti/Si one-diode–one-resistor resistive random access memory device and its low temperature characteristics
Authors
Keywords
-
Journal
Applied Physics Express
Volume 9, Issue 4, Pages 041501
Publisher
Japan Society of Applied Physics
Online
2016-03-17
DOI
10.7567/apex.9.041501

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