Schottky diode with excellent performance for large integration density of crossbar resistive memory

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

(2010) Gun Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

(2010) Woo Young Park et al.   NANOTECHNOLOGY

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

(2010) Gun Hwan Kim et al.   NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Atomic Layer Deposition of TiO[sub 2] Films on Ru Buffered TiN Electrode for Capacitor Applications

(2009) Gyu-Jin Choi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

(2008) Bo Soo Kang et al.   ADVANCED MATERIALS

(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array

(2008) Yong Cheol Shin et al.   APPLIED PHYSICS LETTERS

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

(2008) N. Huby et al.   MICROELECTRONIC ENGINEERING

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology