Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

(2012) Y S Chen et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

(2011) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

(2011) E. Yalon et al.   IEEE ELECTRON DEVICE LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices

(2009) Byungjin Cho et al.   ADVANCED MATERIALS

Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory

(2009) Qingyun Zuo et al.   JOURNAL OF APPLIED PHYSICS

Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer

(2008) Hisashi Shima et al.   APPLIED PHYSICS LETTERS