Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNxas Gate Dielectric

(2017) Xing Lu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Iron as a source of efficient Shockley-Read-Hall recombination in GaN

(2016) Darshana Wickramaratne et al.   APPLIED PHYSICS LETTERS

7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering

(2016) Qi Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

(2015) Y. S. Puzyrev et al.   APPLIED PHYSICS LETTERS

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

(2015) Yun-Hsiang Wang et al.   IEEE ELECTRON DEVICE LETTERS

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

(2015) Jin Wei et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit

(2015) Qi Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

(2014) Wen-Chia Liao et al.   Nanoscale Research Letters

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

(2013) Marco Silvestri et al.   APPLIED PHYSICS LETTERS

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

(2013) Davide Bisi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

(2013) Xiucheng Huang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

(2013) J. Lehmann et al.   MICROELECTRONIC ENGINEERING

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

(2012) Chunhua Zhou et al.   IEEE ELECTRON DEVICE LETTERS

On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

(2011) Milan Ťapajna et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

GaN Power Transistors on Si Substrates for Switching Applications

(2010) Nariaki Ikeda et al.   PROCEEDINGS OF THE IEEE

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

(2009) P. Kordoš et al.   APPLIED PHYSICS LETTERS