High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit

Title
High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 3, Pages 776-781
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-01-15
DOI
10.1109/ted.2014.2385062

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