6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Published 2015 View Full Article

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Title
6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 381-383
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-02-19
DOI
10.1109/led.2015.2401736

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