On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

(2011) Hyung-Seok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

(2010) Milan Ťapajna et al.   IEEE ELECTRON DEVICE LETTERS

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

(2010) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

(2010) M. Faqir et al.   MICROELECTRONICS RELIABILITY

Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements

(2009) A. Chini et al.   ELECTRONICS LETTERS

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

(2009) E. Bahat-Treidel et al.   IEEE ELECTRON DEVICE LETTERS

Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography

(2008) R. J. T. Simms et al.   APPLIED PHYSICS LETTERS