Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
出版年份 2017 全文链接
标题
Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device
作者
关键词
Al<sub>2</sub>O<sub>3</sub>/GaN MOS channel device, Conductance method, Buffer traps, Interface traps
出版物
Nanoscale Research Letters
Volume 12, Issue 1, Pages -
出版商
Springer Nature
发表日期
2017-05-10
DOI
10.1186/s11671-017-2111-z
参考文献
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