Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors

(2015) Wangying Xu et al.   ACS Applied Materials & Interfaces

Water-Induced Scandium Oxide Dielectric for Low-Operating Voltage n- and p-Type Metal-Oxide Thin-Film Transistors

(2015) Ao Liu et al.   ADVANCED FUNCTIONAL MATERIALS

Low-Temperature, Nontoxic Water-Induced Metal-Oxide Thin Films and Their Application in Thin-Film Transistors

(2015) Guoxia Liu et al.   ADVANCED FUNCTIONAL MATERIALS

High-Mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-κ Alumina Dielectric Working in Enhancement Mode

(2014) Genmao Huang et al.   ACS Applied Materials & Interfaces

Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors

(2014) So Yeon Je et al.   ACS Applied Materials & Interfaces

Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric

(2014) Ao Liu et al.   ACS Applied Materials & Interfaces

Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing

(2014) Christophe Avis et al.   ACS Applied Materials & Interfaces

Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-Based TFTs

(2014) Rita Branquinho et al.   ACS Applied Materials & Interfaces

Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors

(2014) Eungkyu Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

(2014) You Seung Rim et al.   ADVANCED MATERIALS

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

(2014) Takio Kizu et al.   APPLIED PHYSICS LETTERS

Electrical and Reliability Characteristics of High-$\kappa~{\rm HoTiO}_{3}~\alpha$-InGaZnO Thin-Film Transistors

(2014) Tung-Ming Pan et al.   IEEE ELECTRON DEVICE LETTERS

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

(2014) Shanmugam Parthiban et al.   JOURNAL OF MATERIALS RESEARCH

Improvement of bias stability of oxyanion-incorporated aqueous sol–gel processed indium zinc oxide TFTs

(2014) Hyungjin Park et al.   Journal of Materials Chemistry C

The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors

(2014) Wangying Xu et al.   Journal of Materials Chemistry C

Inkjet-Printed In2O3 Thin-Film Transistor below 200 °C

(2013) Jun Seok Lee et al.   ACS Applied Materials & Interfaces

High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C

(2013) Yen-Hung Lin et al.   ADVANCED MATERIALS

Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor

(2013) Shinya Aikawa et al.   APPLIED PHYSICS LETTERS

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

(2013) Pradipta K. Nayak et al.   APPLIED PHYSICS LETTERS

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

(2013) Honglei Li et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

(2013) Kookhyun Choi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors

(2013) Jonathan W. Hennek et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

(2013) Young Hwan Hwang et al.   NPG Asia Materials

The Effect of Metal Composition on Bias Stability of Solution Processed Indium Oxide Based Thin Film Transistors

(2013) Young Hwan Hwang et al.   ECS Journal of Solid State Science and Technology

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator

(2012) Jun Li et al.   CURRENT APPLIED PHYSICS

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

(2012) M. Furuta et al.   IEEE ELECTRON DEVICE LETTERS

A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors

(2012) Keunkyu Song et al.   JOURNAL OF MATERIALS CHEMISTRY

Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

(2012) Christophe Avis et al.   JOURNAL OF MATERIALS CHEMISTRY

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

(2012) Yong-Hoon Kim et al.   NATURE

Influences of pH and Ligand Type on the Performance of Inorganic Aqueous Precursor-Derived ZnO Thin Film Transistors

(2011) Taehwan Jun et al.   ACS Applied Materials & Interfaces

Tungsten Oxide as a Gate Dielectric for Highly Transparent and Temperature-Stable Zinc-Oxide-Based Thin-Film Transistors

(2011) Michael Lorenz et al.   ADVANCED MATERIALS

High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

(2011) George Adamopoulos et al.   ADVANCED MATERIALS

Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

(2011) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

(2011) George Adamopoulos et al.   APPLIED PHYSICS LETTERS

High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

(2011) Linfeng Lan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

(2011) Christophe Avis et al.   JOURNAL OF MATERIALS CHEMISTRY

Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In2O3 Semiconductor for Thin-Film Transistors

(2011) Sunho Jeong et al.   Journal of Physical Chemistry C

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

(2011) Myung-Gil Kim et al.   NATURE MATERIALS

Performance of electron beam deposited tungsten doped indium oxide films as anodes in organic solar cells

(2011) Ziyang Hu et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

(2011) L.T. Yan et al.   THIN SOLID FILMS

Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

(2010) Yuri Choi et al.   APPLIED PHYSICS LETTERS

High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

(2010) Taehwan Jun et al.   JOURNAL OF MATERIALS CHEMISTRY

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

(2010) K. K. Banger et al.   NATURE MATERIALS

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

(2009) Chang-Jung Kim et al.   APPLIED PHYSICS LETTERS

Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films

(2009) R.K. Gupta et al.   APPLIED SURFACE SCIENCE

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

(2009) Toshio Kamiya et al.   Journal of Display Technology