High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C
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Title
High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C
Authors
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Journal
ADVANCED MATERIALS
Volume 25, Issue 31, Pages 4340-4346
Publisher
Wiley
Online
2013-06-25
DOI
10.1002/adma.201301622
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