Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors

Published 2014 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 6, Issue 21, Pages 18693-18703
Publisher
American Chemical Society (ACS)
Online
2014-10-07
DOI
10.1021/am504231h

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.